Total dose effects on deep-submicron SOI technology for Monolithic Pixel Sensor development
نویسندگان
چکیده
We developed and characterized Monolithic pixel detectors in deep-submicron Fully Depleted (FD) Silicon On Insulator (SOI) technology. This paper presents the first studies of total dose effects from ionizing radiation performed on single transistor test structures. This work shows how the substrate bias condition during irradiation heavily affects the resulting radiation damage.
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تاریخ انتشار 2009